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| 2SK2905-01R N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-3PF 15.5 0.3 o3.2 0.2 5.5 0.2 9.3 0.3 5.5 0.3 3.2 +0.3 2.3 0.2 2.10.3 1.6 0.3 1.1 --0.1 +0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 5.45 0.2 20 Min 21.5 0.3 5.45 0.2 0.6 +0.2 3.5 0.2 1. Gate 2. Drain 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 70 280 30 1111.1 100 +150 -55 to +150 Unit Equivalent circuit schematic Drain(D) V A A V mJ W C C *1 L=0.302mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V VGS=0V VGS=30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 L=100 H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C 70 1.0 70 0.13 1.5 Min. 60 2.5 Tch=25C Tch=125C Typ. 3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65 Max. 3.5 500 1.0 100 12 4650 1950 530 30 120 130 120 Units V V A mA nA m S pF 20 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.25 30.0 Units C/W C/W 1 2SK2905-01R Characteristics Power Dissipation PD=f(Tc) 125 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 10 3 100 t= 1s 10 2 10s D.C. 75 100s PD [W] ID [A] 10 1 1ms 10ms 100ms 50 10 25 0 t D= T t T 0 0 50 100 150 10 -1 10 -1 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C 200 Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C VGS=20V 150 10V 8V 6.0V 100 ID [A] ID [A] 100 5.5V 10 5.0V 1 4.5V 4.0V 3.5V 0 0 1 2 3 4 5 0.1 0 2 4 6 8 10 50 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 10 3 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C 50 VGS= 3.5V 4.0V 4.5V 5.0V 5.5V 40 10 2 RDS(on) [m ] 30 gfs [s] 6V 20 10 1 10 8V 10V 20V 10 100 0 10 1 10 2 10 3 0 0 50 100 150 200 ID [A] ID [A] 2 2SK2905-01R Drain-source on-state resistance RDS(on)=f(Tch):ID=40A,VGS=10V 5.0 4.5 25 4.0 3.5 20 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA 30 max. 3.0 typ. 2.5 min. 2.0 1.5 1.0 RDS(on)[m ] 15 10 typ. 5 0.5 0 0.0 -50 VGS(th) [V] max. -50 0 50 100 150 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch=25C 50 VDS 25 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz 40 VGS 20 10n 30 Vcc=48V 30V 12V 15 VGS [V] VDS [V] C [F] Ciss 20 10 1n Coss 10 5 Crss 0 0 20 40 60 80 100 120 140 0 100p -2 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 200 180 160 140 10 120 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 3 IF [A] 100 80 t [ns] td(off) 10 2 tf 60 40 20 10V 5V VGS=0V tr td(on) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 1 0.0 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK2905-01R FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) 80 10 1 Transient thermal impedande Zthch=f(t) parameter:D=t/T 70 10 60 0 0.5 0.2 0.1 50 Zthch-c [K/W] 10 -1 0.05 0.02 0.01 t D= t T I(AV) [A] 40 30 10 20 -2 T 0 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 10 0 0 50 100 150 Starting Tch [C] Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=70A 1200 1000 800 Eas [mJ] 600 400 200 0 0 50 100 150 Starting Tch [C] 4 |
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